Comparação de perdas em semicondutores em inversores ZCZVT

Abstract

This work presents a comparative study of semiconductor losses applied to Voltage Source Inverter - VSI for industrial drives applications with different soft-switching techniques. The evaluated techniques are Zero Current Zero Voltage Transition Inverters, known as ZCZVT. In order to make a fair comparison of them, it is proposed a unified design methodology for the auxiliary circuit of both ZCZVT inverters, with on-resonant auxiliary circuit, in such a way that all the IGBTs transistors assisted by theses auxiliary circuits have similar switching conditions, i.e., similar dv/dt and di/dt during transitions between the switches on and off states. Therefore, this methodology is based on the main physical constrains showed by IGBTs operating under switching conditions. By means of this methodology, the ideal conditions of switching for all IGBTs of the single phase bridge have being assured. Additionally, it was developed a comparative study of the stresses, losses and limitations of each one of the auxiliary circuits (resonant and non-resonant). The simulations of the inverters with some important IGBT technologies available on the market served as the basis to assembly the laboratory prototypes. The prototypes are implemented by a circuit under test with the switching strategy is developed using Field Programmable Gate Array - FPGA. After the experimental data acquisition, the results are compared with the simulations carried out in order to determine actual benefits and limitations of each inverter.