Dependência da extração de parâmetros de transistores com porta eletrolítica com o tempo de varredura das medidas elétricas

Abstract

Electrolyte-gated transistors (EGTs) compose a class of devices that operate with a high density of electric current under the application of a low voltage, resulting in a high transconductance. Depending on the voltage range applied to the gate, its modulation occurs due to the field effect, being named as EGOFET (Electrolyte-Gated Organic Field-Effect Transistors), or due to the ionic current of ions diffused into the channel, as occurs in the so-called OECT (Organic Electrochemical Transistors). Regardless of its operation mode, it is important to make sure that the collected data were performed in the steady state in order to have stability during the measurements, good reproducibility of the collected data and information about the EGT operating regime. The current scientific literature has presented numerous publications on EGTs, as well as their application as sensors. However, many of these references lack information on the reproducibility and stability of the data collected during the measurements, which is the exploration focus of this work so far. In the present study, an EGT structure was used, which was exposed to a vast electrical characterization to test: transition between operating modes (from EGOFET to OECT); stability over operating cycles for the transfer curve; data collection with different scan time intervals on the transfer curve; and experimental fit with model Luginieski- Seidel. The studied EGT has the following structure: interdigitated indium tin oxide (ITO) electrodes which form the source and drain electrodes; poly(3-hexylthiophene-2,5diyl) (P3HT) as channel semiconductor; an ionic gel poly(vinylidene fluoride-co-hexafluoropropylene) (P(VDF- HFP)) and 1-ethyl-3-methylimidazolium bis(trifluoro-methylsulfonyl) imide ([EMIM][TFSI]) as the electrolytic dielectric film and a gold foil (Au) to compose the gate electrode.