Fabricação e caracterização de transistores orgânicos de efeito de campo com porta eletrolítica

Abstract

With the growing progress in the area of organic electronics, in addition to applications in the manufacture of electronic devices, there is a new trend for the area, related to biosensors. Organic electronic materials have the ability to biocompatibility, a fundamental property for the transduction of electrical and ionic signals. This work aims to manufacture and investigate the electrical properties of an Electrolyte-Gated Organic Field-Effect transistor (EGOFET). Devices with drain and source terminals of the transistor made of an interdigitated thin film of gold were manufactured. The semiconductor layer, was formed by P3HT, a semiconductor polymer. The dielectric layer was composed of an aqueous solution and an Ag/AgCl conductor. Among the properties that were evaluated are the transistor switching voltage (VG), ON/OFF ratio for different drain voltage values (VD), the conduction current of the channel, transconductance gm, among others. With this work, an organic field effect transistor was included, with performance equivalent to the values found in the literature, thus generating, with such devices, the necessary competence for the manufacture of biosensors.